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A Compact C-band EPR-on-a-chip Transceiver in 130-nm SiGe BiCMOS | IEEE Conference Publication | IEEE Xplore

A Compact C-band EPR-on-a-chip Transceiver in 130-nm SiGe BiCMOS


Abstract:

We present a chip-integrated C-band transceiver for electron paramagnetic resonance (EPR) spectroscopy, implemented in a 130-nm SiGe BiCMOS technology. The presented EPR-...Show More

Abstract:

We present a chip-integrated C-band transceiver for electron paramagnetic resonance (EPR) spectroscopy, implemented in a 130-nm SiGe BiCMOS technology. The presented EPR-on-a-chip transceiver displays an excellent minimum in-band noise Figure of 0.82 dB and a peak in-band output power P_{\mathrm{sat}} of 9.8 dBm. Furthermore, the presented chip provides a wide operating frequency range from 6 GHz to 8 GHz, which is crucial for detecting wideband EPR signals. The receiver and two-stage four-way combined power amplifier provide (conversion) gains of 32.8 dB and 13 dB, respectively. In proof-of-concept EPR measurements using an off-chip PCB coil as a detector and the standard EPR sample BDPA (\alpha,\gamma-bisdiphenylene-\beta-phenylallyl), the presented chip achieves a competitive spin sensitivity of 8\times 10^{10} spins/\sqrt{\mathrm{Hz}} over an active volume of 31 n1.
Date of Conference: 12-15 June 2022
Date Added to IEEE Xplore: 11 July 2022
ISBN Information:
Conference Location: Villasimius, SU, Italy

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