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A 0.13μm GaAs HEMT Reconfigurable Balance-to-Doherty Stacked Power Amplifier for 5G mm-wave Applications | IEEE Conference Publication | IEEE Xplore

A 0.13μm GaAs HEMT Reconfigurable Balance-to-Doherty Stacked Power Amplifier for 5G mm-wave Applications


Abstract:

This paper presents a reconfigurable Doherty-to-balanced (D2B) power amplifier (PA) operating in the Ka band for 5G applications. The circuit, designed in a 0.13μm GaAs H...Show More

Abstract:

This paper presents a reconfigurable Doherty-to-balanced (D2B) power amplifier (PA) operating in the Ka band for 5G applications. The circuit, designed in a 0.13μm GaAs HEMT technology, uses a single-pole-double-throw (SPDT) switch that can enable the reconfiguration between a 50W and a short. The PA achieves a peak power added efficiency (PAEsat) of 21.7% at a saturated output power (Psat) of 28.5dBm in the Doherty mode and 31.4% PAEsat with 29.6dBm Psat in balanced mode. The balanced PA offers good immunity to load mismatches up to a 3:1 VSWR achieving output power fluctuation within 3 dB.
Date of Conference: 18-21 June 2023
Date Added to IEEE Xplore: 29 June 2023
ISBN Information:
Conference Location: Valencia, Spain

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