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Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors | IEEE Conference Publication | IEEE Xplore

Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors


Abstract:

The paper presents the resistive switching of electroforming-free Ti/anodic-TiO2/Cu memristors. Anodic TiO2 thin films were prepared by anodizing Ti layers. Microscale de...Show More

Abstract:

The paper presents the resistive switching of electroforming-free Ti/anodic-TiO2/Cu memristors. Anodic TiO2 thin films were prepared by anodizing Ti layers. Microscale devices were fabricated by direct laser-assisted photolithography. Experimental results showed a bipolar and self-rectifying behavior of the devices, which could be useful for crossbar array configurations. Moreover, a gradual resistive switching of the devices in both directions was observed, indicating the presence of multi-level resistance states.
Date of Conference: 10-13 September 2018
Date Added to IEEE Xplore: 29 November 2018
ISBN Information:
Conference Location: Palermo, Italy

References

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