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Design of a Simple Readout Circuit for Resistive Switching Memristors Based on CMOS Inverters | IEEE Conference Publication | IEEE Xplore

Design of a Simple Readout Circuit for Resistive Switching Memristors Based on CMOS Inverters


Abstract:

In this paper a CMOS reading circuit for memristor-based RRAM (Resistive Random Access Memory) cell is described. Simulations for one cell, 4 by 4 nMOS-accessed-array and...Show More

Abstract:

In this paper a CMOS reading circuit for memristor-based RRAM (Resistive Random Access Memory) cell is described. Simulations for one cell, 4 by 4 nMOS-accessed-array and extension to N by N nMOS-accessed-array are presented. The proposed circuit is based on CMOS inverters, which result in a simple low area architecture and in a non-destructive operation. Resistive switching memristor is used as reading reference. Simulations were performed in 0.5 μm and 180 nm CMOS technology and using memristor model available in bibliography.
Date of Conference: 10-13 September 2018
Date Added to IEEE Xplore: 29 November 2018
ISBN Information:
Conference Location: Palermo, Italy

References

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