Loading [a11y]/accessibility-menu.js
Sensors based on AlGaN/GaN HEMT for fast H2 and O2 detection and measurement at high temperature | IEEE Conference Publication | IEEE Xplore

Sensors based on AlGaN/GaN HEMT for fast H2 and O2 detection and measurement at high temperature


Abstract:

Gas sensors based on AlGaN/GaN transistors are fabricated using platinum gate to detect and to quantify 112 (1.5-10%) and O2 (1.5-100%) species at high temperature (500 °...Show More

Abstract:

Gas sensors based on AlGaN/GaN transistors are fabricated using platinum gate to detect and to quantify 112 (1.5-10%) and O2 (1.5-100%) species at high temperature (500 °C). The metrics ΔI/Δt measured within the 5 first seconds of the transient response to the target gas exposure is used to quantify the performance of the sensors. A linear relation between ΔI/Δt and gas concentration is found. ΔI/Δt increases with gas concentration and decreases at high temperature. Sensor sensitivity increases when gas concentration increases. For H2 gas, it is noticed that the sensitivity increases when temperature increases. Sensors response and recovery times decrease as gas concentration increases and decrease when temperature decreases.
Published in: 2019 IEEE SENSORS
Date of Conference: 27-30 October 2019
Date Added to IEEE Xplore: 14 January 2020
ISBN Information:

ISSN Information:

Conference Location: Montreal, QC, Canada

Contact IEEE to Subscribe

References

References is not available for this document.