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An Ultrafast Active Quenching Circuit for SPAD in CMOS 28nm FDSOI Technology | IEEE Conference Publication | IEEE Xplore

An Ultrafast Active Quenching Circuit for SPAD in CMOS 28nm FDSOI Technology


Abstract:

A very fast Active Quenching-Active Reset Circuit is proposed for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed i...Show More

Abstract:

A very fast Active Quenching-Active Reset Circuit is proposed for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm CMOS FDSOI (Fully Depleted Silicon On Insulator) technology which takes benefit from the Body Biasing. By means of a very fast detection circuit, the avalanche is detected in just 27 ps. The fast detection results in a quenching time of less than 210 ps with a 46% reduction of the charge involved in the avalanche process. This reduction in the avalanche charge should strongly reduce the afterpulsing effect.
Published in: 2020 IEEE SENSORS
Date of Conference: 25-28 October 2020
Date Added to IEEE Xplore: 09 December 2020
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ISSN Information:

Conference Location: Rotterdam, Netherlands

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