20nm FinFET-based SRAM cell: Impact of variability and design choices on performance characteristics | IEEE Conference Publication | IEEE Xplore

20nm FinFET-based SRAM cell: Impact of variability and design choices on performance characteristics


Abstract:

The relentless scaling of semiconductor technology has resulted in dramatic performance improvements of Integrated Circuits (ICs). However, traditional planar CMOS techno...Show More

Abstract:

The relentless scaling of semiconductor technology has resulted in dramatic performance improvements of Integrated Circuits (ICs). However, traditional planar CMOS technology seems to have reached its limit. To continue with Moore's law, FinFET technology has shown to be a viable solution. Process variations are still relevant, however. Therefore, it is crucial to study their impact on circuit performance. This paper explores design choices for 20nm FinFET-based SRAM cells and analyzes the impact of process variations on the performance characteristics of the SRAM cell.
Date of Conference: 12-15 June 2017
Date Added to IEEE Xplore: 17 July 2017
ISBN Information:
Conference Location: Giardini Naxos, Italy

References

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