Abstract:
This paper presents a MOSFET model for ultra-low power radio-frequency integrated circuits (RFICs) design. In addition, we discussed the concept of the Operating Paramete...Show MoreMetadata
Abstract:
This paper presents a MOSFET model for ultra-low power radio-frequency integrated circuits (RFICs) design. In addition, we discussed the concept of the Operating Parameter (OP) as the main design parameter used to determine the operating point, from weak, via moderate, or strong inversion. The proposed OP based analytical model is applied to an LNA design (3-5 GHz) in 130 nm CMOS technology. Simulation results showed a minimum noise figure (NF) of 2.3 dB, max gain 9.6 dB and 0.25 mW power dissipation. The figure of merit (FoM) is found to be superior to previous design techniques.
Date of Conference: 02-05 July 2018
Date Added to IEEE Xplore: 16 August 2018
ISBN Information: