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Confirmation of the Instrumental Difference for Each Ion-Sensitive Field-Effect Transistors to Evaluate Mental Workload | IEEE Conference Publication | IEEE Xplore

Confirmation of the Instrumental Difference for Each Ion-Sensitive Field-Effect Transistors to Evaluate Mental Workload


Abstract:

From our preceding studies, we disclosed the characteristics of the under-development device, called salivary NO3- Ion-Sensitive Field-Effect Transistors (NO3--ISFETs). T...Show More

Abstract:

From our preceding studies, we disclosed the characteristics of the under-development device, called salivary NO3- Ion-Sensitive Field-Effect Transistors (NO3--ISFETs). These transistors have evaluated the navigators' mental workload in maneuvering a ship through the ship simulator experiments which can arrange the uniform experimental circumstances at the different simulator's scenario. The NO3--ISFETs give the quantitative evaluation of the mental workload, using NO3- in onedrop saliva. The NO3--ISFETs are supposed to be used for the navigators working anywhere in a ship around the clock. Therefore, our goal is to complete the NO3--ISFETs, which have the durability for mucin in saliva when they measure the salivary NO3- long time for the purpose of the prevention of navigator's human factors in their duties. This time, we tried to carry out another ship-simulator experiment with new NO3--ISFETs changed the polymer which is used at the device's sensor part. We can confirm the instrumental difference between conventional NO3--ISFETs and new ones, while we evaluate the variability of navigators' mental workload.
Date of Conference: 11-14 October 2020
Date Added to IEEE Xplore: 14 December 2020
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Conference Location: Toronto, ON, Canada

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