Abstract:
This paper presents a novel design methodology for high power terahertz and submillimeter wave CMOS amplifiers. This approach is a microwave-based method, commonly used f...Show MoreMetadata
Abstract:
This paper presents a novel design methodology for high power terahertz and submillimeter wave CMOS amplifiers. This approach is a microwave-based method, commonly used for designing amplifiers with operation frequencies close to maximum oscillation frequency (fmax) of the transistors. This approach calculates the optimum conditions by monitoring active region of the devices in order to attain maximum accessible transistor power gain (Gacc). Limitations of existing methods and improvements upon them are investigated through both theory and simulation. Finally, a 100 GHz single-stage high-power submillimeter wave amplifier with a gain of 3.75 dB is designed and simulated in 130nm CMOS technology using the proposed microwave approach.
Date of Conference: 02-05 September 2014
Date Added to IEEE Xplore: 06 November 2014
Electronic ISBN:978-1-4799-3378-5