This paper presents the current-voltage (I-V) characteristic of our proposed Silicon-on-Ferroelectric Insulator Field Effect Transistor (SOF-FET). The proposed SOF-FET is based on the concept of silicon-on-insulator (SOI) device technology and it utilizes a negative capacitance that can be achieved by inserting a layer of ferroelectric insulator inside the bulk silicon substrate of the device. The negative capacitance (NC) effect can provide an internal signal boosting that leads to steeper subthreshold slope, which is the prime requirement for ultra-low-power circuit operation. Here we have analyzed the impacts of channel doping profile on the behavior of the proposed SOF-FET. The major focus of this paper is the investigation of the current-voltage (I-V) characteristics of the proposed SOF-FET. Here the (I-V) characteristics of both the subthreshold and the saturation regions of the proposed device have been derived.