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WOM-Code Solutions for Low Latency and High Endurance in Phase Change Memory | IEEE Journals & Magazine | IEEE Xplore

WOM-Code Solutions for Low Latency and High Endurance in Phase Change Memory


Abstract:

This paper describes a write-once-memory-code phase change memory (WOM-code PCM) architecture for next-generation non-volatile memory applications. Specifically, we addre...Show More

Abstract:

This paper describes a write-once-memory-code phase change memory (WOM-code PCM) architecture for next-generation non-volatile memory applications. Specifically, we address the long latency of the write operation in PCM-attributed to PCM SET-by proposing a novel PCM memory architecture that integrates the 〈22}2/3 WOM-code at the memory organization and memory controller levels. To further improve the write latency of WOM-code PCM, we propose a PCM-refresh approach that uses idle cycles to preemptively set PCM rows to the initial WOM-code state. Finally, to balance write latency improvements against WOM-code PCM overhead, we propose a WOM-code cached PCM (WCPCM) architecture that uses WOM-code PCM as the cache alongside conventional PCM main memory. Since WOM-code techniques inherently impact PCM endurance by increasing the number of bitwrites in comparison to unencoded PCM, we incorporate additional transitions from the 〈22}2/3 WOM-code transition graph to realize endurance-WOM-code (e-WOM-code) architectures. Transitions between the e-WOM-code states on writes to memory are integrated into an incremental coding for endurance (ICE) approach that exploits redundancies in the conventional WOM-code to reduce the number of bit-writes over unencoded PCM. Simulation results show that the proposed e-WOM-code PCM architecture is able to reduce memory write (read) latency by 19.8 percent (14.7 percent) and the number of bit-writes over unencoded PCM without (with) datacomparison write (DCW), a read-modify-write process that only updates changed cells, by 83.0 percent (22.1 percent) on average across general-purpose (SPEC CPU2006), embedded (MiBench), and high-performance (SPLASH-2) benchmarks. Further, e-WOMcode PCM with PCM-refresh can reduce memory write (read) latency by 51.5 percent (44.1 percent) and the number of bit-writes over unencoded PCM without DCW by 76.5 percent on average across the benchmarks; there is, however, an increase of 19 percent in the number of bit-...
Published in: IEEE Transactions on Computers ( Volume: 65, Issue: 4, 01 April 2016)
Page(s): 1025 - 1040
Date of Publication: 08 December 2015

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