Abstract:
With aggressive technology scaling and heightened variability, circuits such as SRAMs and DRAMs have become vulnerable to random telegraph noise (RTN). The bias dependenc...Show MoreMetadata
Abstract:
With aggressive technology scaling and heightened variability, circuits such as SRAMs and DRAMs have become vulnerable to random telegraph noise (RTN). The bias dependence (i.e., non-stationarity), bi-directional coupling, and high inter-device variability of RTN present significant challenges to understanding its circuit-level effects. In this paper, we present two computer-aided design (CAD) tools, SAMURAI and MUSTARD, for accurately estimating the impact of non-stationary RTN on SRAMs and DRAMs. While traditional (stationary) analysis is often overly pessimistic (e.g., it overestimates RTN-induced SRAM failure rates), the predictions made by SAMURAI and MUSTARD are more reliable by virtue of non-stationary analysis.
Published in: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ( Volume: 32, Issue: 1, January 2013)