The poor quality of the die stacking process for 3-D integrated circuits can result in the failure of the process in the through-silicon-vias (TSVs) in dense regions. Previous works use the same number of redundant TSVs and architectures that do not consider the TSV density. A repair architecture and an appropriate number of redundant TSVs, which are chosen considering the TSV density, are required for an improved repair rate. This paper proposes a method that demonstrates such an architecture and calculates the required number of TSVs. The method has a high repair rate for clustered faults, and wire-length problems are solved using the shift-based repair method.