Recent developments in CMOS passive mixers have demonstrated a number of new and useful capabilities, including dynamic RF port impedance control and filter up-conversion, while also allowing low noise figure and high out-of-band linearity, all of which track wide-ranging LO frequencies and tunable baseband bandwidth. However, these circuits also bring a unique set of challenges and requirements. Here we extend a previously derived LTI model for such mixers to the general N-phase case, and discuss basic limits in performance specifications including impedance matching, noise figure and linearity. We then extend this analysis to include high-frequency effects, especially as they relate to transistor properties. We show that essentially all of the key specification of such mixers can be described in terms of an impedance ratio, a characteristic cut-off frequency, the number of phases of the mixer and some process-related parameters. Finally, we discuss how these properties relate to power consumption of LO circuitry.