Abstract:
An improved relaxation oscillator core is designed and fabricated in 0.35-μm CMOS process, occupying the area of 0.032 mm2 and consuming around 160 μW while running at 1 ...Show MoreMetadata
Abstract:
An improved relaxation oscillator core is designed and fabricated in 0.35-μm CMOS process, occupying the area of 0.032 mm2 and consuming around 160 μW while running at 1 MHz. Employing a self-compensating chopped comparator structure, the designed oscillator exhibits a significant improvement in the frequency stability and control linearity, at the same time retaining a fast start-up and having a minimal overhead in the power consumption and area. Measured on 8 test chips, the frequency variation against temperature is ±0.26% in the temperature range from -40 to 125 °C, and the line sensitivity is ±0.08 %/V with the supply voltage changing from 3.0 to 4.5 V. The typical distortion parameters of the control characteristic are HD2 = -61.7 dB and HD3 = -93.2 dB at △fosc = 500 kHz. The measured jitter and phase noise at 10 kHz carrier offset are 235 ppm and -92 dBc/Hz, respectively, while the Allan deviation floor is 15 ppm.
Published in: IEEE Transactions on Circuits and Systems I: Regular Papers ( Volume: 66, Issue: 5, May 2019)