Loading [a11y]/accessibility-menu.js
A Highly Linear Multi-Level SC DAC in a Power-Efficient Gm-C Continuous-Time Delta-Sigma Modulator | IEEE Journals & Magazine | IEEE Xplore

A Highly Linear Multi-Level SC DAC in a Power-Efficient Gm-C Continuous-Time Delta-Sigma Modulator


Abstract:

A highly linear multi-level switched-capacitor (SC) digital-to-analog converter (DAC) is proposed for continuous-time delta-sigma modulators (CTDSMs). A Gm-C CTDSM with a...Show More

Abstract:

A highly linear multi-level switched-capacitor (SC) digital-to-analog converter (DAC) is proposed for continuous-time delta-sigma modulators (CTDSMs). A Gm-C CTDSM with a passive frontend low-pass filter (LPF) is further proposed to mitigate the problems of increased settling requirements and worsened anti-aliasing capability (consequences of an SC DAC) so as to realize an extremely power-efficient CTDSM. A 100-kHz bandwidth 40× oversampling 3rd-order CTDSM prototype employing the proposed DAC and modulator topology is fabricated in a low-leakage 65-nm CMOS technology. Experimental results show that the modulator achieves a spurious-free dynamic range (SFDR), dynamic range (DR) and signal-to-noise and distortion ratio (SNDR) of 86.6 dB, 85.1 dB and 78.8 dB, respectively. To the best of our knowledge, this is the first silicon-proven CTDSM with a more-than-3-level DAC that leads to an excellent SFDR while not requiring dynamic element matching, component calibration, precise reference voltages, or an operating frequency higher than the modulator's sampling frequency fs. The prototype consumes 22.8 μW from a 1.2-V supply, amounting to a Walden's and Schreier's figure of merit (FoM) of 16 fJ/conv.step and 181.5 dB, respectively, which is the best among state-of-the-art CTDSMs. It further achieves high alias rejections of 52 dB and 58 dB at fs and 2fs, respectively, and can tolerate a clock period jitter of 3 ns.
Published in: IEEE Transactions on Circuits and Systems I: Regular Papers ( Volume: 66, Issue: 12, December 2019)
Page(s): 4592 - 4605
Date of Publication: 02 September 2019

ISSN Information:

Funding Agency:


Contact IEEE to Subscribe

References

References is not available for this document.