Abstract:
A fully differential CMOS ultrawideband low-noise amplifier (LNA) is presented. The LNA has been realized in a standard 90-nm CMOS technology and consists of a common-gat...Show MoreMetadata
Abstract:
A fully differential CMOS ultrawideband low-noise amplifier (LNA) is presented. The LNA has been realized in a standard 90-nm CMOS technology and consists of a common-gate stage and two subsequent common-source stages. The common-gate input stage realizes a wideband input impedance matching to the source impedance of the receiver (i.e., the antenna), whereas the two subsequent common-source stages provide a wideband gain by exploiting RLC tanks. The measurements have exhibited a transducer gain of 22.7 dB at 5.2 GHz, a 4.9-GHz-wide B 3dB, an input reflection coefficient lower than -10.5 dB, and an input-referred 1-dB compression point of -19.7 dBm, which are in excellent agreement with the postlayout simulation results, confirming the approach validity and the design robustness.
Published in: IEEE Transactions on Circuits and Systems II: Express Briefs ( Volume: 56, Issue: 9, September 2009)