This brief presents a low phase noise class-C voltage-controlled oscillator with bond wire inductors. To improve the Q-factor of inductors, the voltage-controlled oscillator employs bond wires as the inductors of the resonators. A transient-analysis-compatible equivalent circuit is proposed to precisely estimate the influence of mutual inductance, parasitic components and silicon substrate. Possible phenomena of oscillation mode ambiguity and oscillation failure are analyzed to be relative with the magnetic coupling between bond wires. An equation is derived to set up the relation among oscillation mode, bond wire coupling and frequency ratio of adjacent oscillators. And a costless placement reorder method is proposed to prevent the oscillator cores from oscillating failure and mode ambiguity. The voltage-controlled oscillator is implemented in a 65-nm CMOS process. Ten groups of gold double bond wires with a 20 $\mu \text{m}$ diameter, 70 $\mu \text{m}$ height and 800 $\mu \text{m}$ horizontal length are adopted as the inductors. The total tuning range of the oscillator is from 2.22 GHz to 4.46 GHz. When oscillating at 4.46 GHz and the output frequency divide ratio is 2, the output signal provides phase noise performance of −137.3 dBc/Hz at 1 MHz offset from 2.23 GHz. The maximum power consumption is 38 mW and each oscillator core occupies a chip area of only 0.112 mm².