Abstract:
This brief presents a balanced power amplifier (BPA) with adaptive-bias for 5G applications based on 28-nm bulk CMOS process. The PA utilizes a differential balanced stru...Show MoreMetadata
Abstract:
This brief presents a balanced power amplifier (BPA) with adaptive-bias for 5G applications based on 28-nm bulk CMOS process. The PA utilizes a differential balanced structure which cancels out reflected signals at the isolation ports, thereby improving return losses. A folded differential quadrature coupler is designed to connect respectively to the input and output of the PAs. The folded layout effectively reduces the chip size. In addition, a complementary adaptive bias is implemented to cancel out the nonlinear effects of the two PAs, significantly enhancing the overall linearity. The measure PA realizes a 3-dB bandwidth of 21.3\sim 28 .4 GHz with a peak gain of 21.1 dB. The large-signal measurement results show that the PA achieve an OP1dB of 20.3 dBm, a P_{\mathrm { sat}} of 21.6 dBm, and a peak PAE (PAEmax) of 30.9%. The measured |AM-PM|P1dB is less than 8.9°, which is 3\sim 8^{\circ } lower than when using a normal bias. For 5G NR FR2 200-MHz 64QAM signals, the measured P_{\mathrm { avg}} / {\mathrm { PAE}}_{\mathrm { avg}} / ACPR of 11.2 dBm / 6% / –24.9 dBc are achieved at the EVM of –25 dB. The DC power supply voltage is 1.8 V. The core chip size is only 0.27 mm2, demonstrating a compact design within a balanced architecture.
Published in: IEEE Transactions on Circuits and Systems II: Express Briefs ( Volume: 72, Issue: 1, January 2025)