A Finite-Element Approach to Analyze the Thermal Effect of Defects on Silicon-Based PV Cells | IEEE Journals & Magazine | IEEE Xplore

A Finite-Element Approach to Analyze the Thermal Effect of Defects on Silicon-Based PV Cells


Abstract:

The paper introduces the issue of the typical defects in photovoltaic (PV) cells and focuses the attention on three specific defects: linear edge shunt, hole, and conduct...Show More

Abstract:

The paper introduces the issue of the typical defects in photovoltaic (PV) cells and focuses the attention on three specific defects: linear edge shunt, hole, and conductive intrusion. These defects are modeled by means of finite-element method and implemented in Comsol Multiphysics environment to analyze the temperature distribution in the whole defected PV cell. All the three typologies of silicon-based PV cells are considered: monocrystalline, polycrystalline, and amorphous. Numerical issues (simulation times, degrees of freedom, mesh elements, and grid dependence analysis) are reported.
Published in: IEEE Transactions on Industrial Electronics ( Volume: 59, Issue: 10, October 2012)
Page(s): 3860 - 3867
Date of Publication: 28 July 2011

ISSN Information:


References

References is not available for this document.