Abstract:
The dynamic on-resistance (rON) of two mainstream 600 V/650 V p-GaN gate power high-electron-mobility transistors (HEMTs) with Ohmic- and Schottky-type p-GaN gate contact...Show MoreMetadata
Abstract:
The dynamic on-resistance (rON) of two mainstream 600 V/650 V p-GaN gate power high-electron-mobility transistors (HEMTs) with Ohmic- and Schottky-type p-GaN gate contacts are characterized under the hard-switching condition and show strong dependences on the gate driving conditions under both double-pulse and multipulse testing modes. The statistical measurement of multiple samples indicates this is a representative phenomenon in these two types of commercial p-GaN gate power HEMTs. For Ohmic-type p-GaN gate HEMT, gate injection current (IG) at the on state from the p-GaN gate facilitates a faster detrapping process and contributes to a smaller dynamic rON. For Schottky-type p-GaN gate HEMT, the dynamic rON shows a strong dependence on the gate overdrive voltage (VGS) because the higher VGS can compensate the increase in dynamic rON induced by the positively shifted VTH under high drain bias. A larger IG (from 1.2 to 22 mA) and higher VGS (from 5 to 7 V) play the most important role in suppressing the dynamic rON under high switching frequency and high drain bias condition (i.e., 400 kHz/400 V), where the reduction of dynamic rON is 13.6% and 17.1% for Ohmic-type and Schottky-type p-GaN gate HEMTs, respectively.
Published in: IEEE Transactions on Industrial Electronics ( Volume: 69, Issue: 8, August 2022)