Spin-transfer torque RAM (STT-RAM) caches are foreseen to replace traditional static RAM caches because of their nonvolatile nature and high density. Multilevel cell (MLC) STT-RAMs further enhance the storage density of single-level cell STT-RAMs. However, the two-step read/write process in MLC STT-RAMs adversely affects performance, energy consumption, and lifetime. Moreover, technology scaling makes the read operations disturb the stored data in MLC STT-RAMs, giving rise to an issue called read disturbance (RD). Restore operations, which are required to cope with RD, further add to the problems of using MLCs. In this brief, we propose a Restore-free mode for frequently reused cache lines in MLC STT-RAMs that leverages single-step read/write operations to the MLC without the need for restore operations. Our proposed scheme in single-core (quad-core) systems, achieves a 27.4% (23%) dynamic energy reduction, a 3.7% (7%) increase in performance, and an 81% (62.5%) lifetime improvement.