Abstract:
A 6.4Gb/s TX-interleaving (TI) technique at sub-1V supply voltage is implemented with 25nm DRAM process for the future mobile DRAM interface which requires 51.2 GBps (2X ...Show MoreMetadata
Abstract:
A 6.4Gb/s TX-interleaving (TI) technique at sub-1V supply voltage is implemented with 25nm DRAM process for the future mobile DRAM interface which requires 51.2 GBps (2X Bandwidth of LPDDR4). A newly proposed 2-channel TX interleaving technique with a bootstrapping switch can save power consumption drastically by eliminating repeaters, while operating at 6.4 Gb/s with 40 % enhancement of I/O power efficiency compared to that of the LPDDR4.
Published in: 2015 Symposium on VLSI Circuits (VLSI Circuits)
Date of Conference: 17-19 June 2015
Date Added to IEEE Xplore: 03 September 2015
Print ISBN:978-4-86348-502-0
Contents 