Abstract:
In this paper, we present a state-of-the-art integrated GaN power IC capable of operating in a high frequency (MHz) regime. This realizes system size reduction, 60% maxim...Show MoreMetadata
Abstract:
In this paper, we present a state-of-the-art integrated GaN power IC capable of operating in a high frequency (MHz) regime. This realizes system size reduction, 60% maximum, of a power IC. The IC consists of two output power transistors (PT) and two gate drivers (GD). The key devices in the IC are normally-off gate injection transistors (GITs) for PT and GD and a normally-on hetero-junction field effect transistor (HFET) for GD. Novel local control of carrier concentration of an identical 2 dimensional electron gas (2DEG) at an AlGaN/GaN interface which made integration of the transistors with such a large threshold voltage difference possible is described. A specially developed post-passivation interconnection process giving low parasitic components is also described. The IC applied to a 12V-1.8V DC-DC converter shows high frequency switching operation well beyond the limit of Si pointing to future improvement in consumer electronics power supply systems.
Published in: 2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)
Date of Conference: 15-17 June 2016
Date Added to IEEE Xplore: 22 September 2016
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