Abstract:
We report the first demonstration of a fully CMOS-compatible non-volatile programmable photonic switch on the SOI photonic platform featuring Al-doped HfO2 (HAO) ferroele...Show MoreMetadata
Abstract:
We report the first demonstration of a fully CMOS-compatible non-volatile programmable photonic switch on the SOI photonic platform featuring Al-doped HfO2 (HAO) ferroelectric technology. We innovate in utilizing remnant polarization (Pr) in the HAO film to modulate the refractive index of the waveguide, leading to a non-volatile modulation of the light propagating in the waveguide. Transparent indium tin oxide (ITO) is employed as the top electrode instead of metal to minimize the propagation loss. Our non-volatile programmable photonic switch operating at 1550 nm wavelength exhibits outstanding performances, including a maximum resonance peak shift of 0.2 nm with one of the highest extinction ratios of 8.9 dB at a low working voltage of 5 V and a decent endurance of 4×104 cycles.
Date of Conference: 12-17 June 2022
Date Added to IEEE Xplore: 22 July 2022
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