Abstract:
We demonstrate, for the first time, a 30nm-diameter vertical Channel-All-Around (CAA) ferroelectric FET (FeFET) with TiO2 channel, aiming at 4F2 high speed memory applica...Show MoreMetadata
Abstract:
We demonstrate, for the first time, a 30nm-diameter vertical Channel-All-Around (CAA) ferroelectric FET (FeFET) with TiO2 channel, aiming at 4F2 high speed memory application. Thanks to Gate-Source/Drain overlap of CAA structure and interface-layer-free nature of oxide semiconductor channel, high ΔIon and stable endurance are simultaneously achieved in the smallest footprint ever (707nm2). Low aspect ratio FeFET with thermally stable crystallized TiO2 channel facilitates multiple memory stacking. We also show the scalability of CAA FeFET without performance degradation by contact electrode optimization and spacer oxide engineering, providing a new path for future high density and high speed memory.
Date of Conference: 16-20 June 2024
Date Added to IEEE Xplore: 26 August 2024
ISBN Information: