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A Temporal Noise Reduction via 40% Enhanced Conversion Gain in Dual-Pixel CMOS Image Sensor with Full-Depth Deep-Trench Isolation and Locally Lowered-Stack Technology | IEEE Conference Publication | IEEE Xplore

A Temporal Noise Reduction via 40% Enhanced Conversion Gain in Dual-Pixel CMOS Image Sensor with Full-Depth Deep-Trench Isolation and Locally Lowered-Stack Technology


Abstract:

In this paper, we demonstrate a dual-pixel CMOS image sensor (CIS) with full-depth deep-trench isolation (FDTI) and locally lowered-stack (LLS) structure. When the LLS st...Show More

Abstract:

In this paper, we demonstrate a dual-pixel CMOS image sensor (CIS) with full-depth deep-trench isolation (FDTI) and locally lowered-stack (LLS) structure. When the LLS structure is adopted, the floating diffusion (FD) metal capacitance is dramatically reduced, resulting in a 40% increase in conversion gain (CG) and a 25% improvement in temporal noise (TN). We also present TN analysis from the perspective of the feedback circuit scheme.
Date of Conference: 16-20 June 2024
Date Added to IEEE Xplore: 26 August 2024
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Conference Location: Honolulu, HI, USA

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