The long-term reliability of the Static Random Access Memory (SRAM) module, as an important component of computing architectures, is crucial for safety-critical applications such as automotive. In the front end of the line (FEoL), the transistor elements are vulnerable to negative bias temperature instability (NBTI), while the back end of the line (BEoL) interconnect is prone to electromigration (EM). Complying with safety-critical standards as part of silicon lifecycle management (SLM) infrastructure requires an understanding of the combined aging mechanisms of transistors and interconnects in SRAM. Moreover, a precise aging model is a prerequisite for effective aging testing and mitigation strategies. For this aim, we augment the Technology Computer-Aided Design (TCAD) transistor model with a detailed NBTI model at the FEoL, and use measurement-calibrated physical modeling of EM at the BEoL, to create an integrated analysis that can provide deeper insights into the individual and combined effects of NBTI and EM for SRAM operation. Our findings reveal the mutual acceleration of delay faults and hard stuck-at faults caused by NBTI and EM in SRAM, offering a precise methodology for estimating the time to failure under these conditions.