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Reseach of terahertz Narrow-wall 3dB coupler on silicon-substrate | IEEE Conference Publication | IEEE Xplore

Reseach of terahertz Narrow-wall 3dB coupler on silicon-substrate


Abstract:

In this paper, a THz-band Narrow-wall 3dB coupler is designed. The 3dB coupler works in 490-510 GHz, The simulation results show that the VSWR is lower than 1.12 in the w...Show More

Abstract:

In this paper, a THz-band Narrow-wall 3dB coupler is designed. The 3dB coupler works in 490-510 GHz, The simulation results show that the VSWR is lower than 1.12 in the working-band. The isolation of the two input ports and two output ports is lower than -25dB, the 3dB coupler obtain slow insertion loss, the phase difference among the two output ports is 90°. Micro-electro-mechanical systems(MEMS) technology is an option for fabricating THz devices for its high fabrication precision and capability of batch production.
Date of Conference: 16-18 May 2013
Date Added to IEEE Xplore: 02 December 2013
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ISSN Information:

Conference Location: Chongqing, China

References

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