Paper
17 May 2002 Amorphous silicon thin-film transistor-based active-matrix organic light-emitting displays for medical imaging
Joo-Han Kim, Jerzy Kanicki
Author Affiliations +
Abstract
We have developed three hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs)-based pixel electrode circuits for active-matrix organic polymer light-emitting displays (AM-OP-LEDs). Our 3- a-Si:H TFTs voltage driven pixel electrode circuits can supply a continuous output current for AM-OP-LEDs. Each pixel circuit has compensation circuits that can adjust for the OP-LED and a-Si:H TFTs electrical characteristics shift. This pixel electrode circuit fabricated in our laboratory had the driving output current level of 1.13 (mu) A that is equivalent to a pixel current density of over 20 mA/cm2. The display brightness of ~4500 cd/m2 for green light (540 nm) can be achieved with this type of pixel electrode circuits for the organic polymer light-emitting devices having an external quantum efficiency of 5%.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joo-Han Kim and Jerzy Kanicki "Amorphous silicon thin-film transistor-based active-matrix organic light-emitting displays for medical imaging", Proc. SPIE 4681, Medical Imaging 2002: Visualization, Image-Guided Procedures, and Display, (17 May 2002); https://doi.org/10.1117/12.466933
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Cited by 4 scholarly publications.
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KEYWORDS
Electrodes

Switching

Device simulation

Amorphous silicon

Data storage

Capacitors

Medical imaging

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