ABSTRACT
This paper presents the design of an ultra-low-power self-biased 400pA current source. An efficient design methodology has resulted in a cell area around 0.045mm2 (0.027mm2) in the AMIS 1.5μm (TSMC 0.35μm) CMOS technology and power consumption around 2nW for 1.2V supply. Simulated and experimental results validate the design and show that the current sources can operate at supply voltages down to 1.1V with a good regulation (< 4%/V variation of the supply voltage in a 0.35μm technology). This current source is suitable for very-low-power applications.
- S. Tang, S. Narendra, and V. De, "Temperature and process invariant MOS-based reference current generation circuits for sub-1V operation," Proc. of ISLPED 2003, pp. 199--204. Google ScholarDigital Library
- W. M. Sansen, F. O. Eynde, and M. Steyaert, "A CMOS temperature-compensated current reference," IEEE J. Solid-State Circuits, vol. 23, no. 3, pp. 821--824, June 1988.Google ScholarCross Ref
- C.-H. Lee and H.-J. Park, "All-CMOS temperature independent current reference," IEE Electronics Letters, vol. 32, no. 14, pp. 1280--1281, July 1996.Google ScholarCross Ref
- S. Yan and E. Sánchez-Sinencio, "Low voltage analog circuit design techniques: A tutorial," IEICE Trans. Fundamentals of Electronics, Communication and Computer Sciences, vol. E83-A, No.2, pp. 1--17, February 2000.Google Scholar
- B. Linares-Barranco and T. Serrano-Gotarredona, "On the design and characterization of femtoampere current-mode circuits," IEEE J. Solid-State Circuits, vol. 38, pp. 1353--1363, August 2003.Google ScholarCross Ref
- E. Vittoz and J. Fellrath, "CMOS analog circuits based on weak inversion operation," IEEE J. Solid-State Circuits, vol. SC-12, pp. 224--231, June 1977.Google ScholarCross Ref
- E. A. Vittoz and C. C Enz, "CMOS low-power analog circuit design", Proceedings of the International Symposium on Circuits and Systems (ISCAS'96), chapter 1.2 of Tutorials.Google Scholar
- H. J. Oguey and D. Aebischer, "CMOS current reference without resistance," IEEE J. Solid-State Circuits, vol. SC-32, pp. 1132--1135, July 1997.Google ScholarCross Ref
- F. Serra-Graells and J. L. Huertas, "Sub -1-V CMOS proportional-to-absolute temperature references", IEEE J. Solid-State Circuits, vol. 38, no. 1, pp. 84--88, January 2003.Google ScholarCross Ref
- A. I. A. Cunha, M. C. Schneider, and C. Galup-Montoro, "An MOS transistor model for analog circuit design," IEEE J. Solid-State Circuits, vol. 33, pp. 1510--1519, October 1998.Google ScholarCross Ref
- C. Galup-Montoro, M. C. Schneider, and I. J. B. Loss, "Series-parallel association of FETs for high gain and high frequency applications", IEEE J. Solid-State Circuits, vol. 29, no. 9, pp. 1094--1101, September 1994.Google ScholarCross Ref
- B. Gilbert, "Current-mode, voltage-mode, or free mode? A few sage suggestions", Analog Integrated Circuits and Signal Processing, vol. 38, pp. 83--101, February 2004. Google ScholarDigital Library
Index Terms
- An ultra-low-power self-biased current reference
Recommendations
Experimental 5-GHz RF frontends for ultra-low-voltage and ultra-low-power operations
This paper presents experimental CMOS RF frontends suitable for ultra-low-power and ultra-low-voltage operations. In order to achieve the desirable gain and linearity of the receiver chain at a reduced supply voltage, the current-reused bias technique ...
Ultra low-voltage CMOS current mirrors
In this paper we present an ultra low-voltage bidirectional and continuous time current mirror based on clocked semi-floating-gate transistors. The current mirror may be used with supply voltages down to 250 mV and frequencies up to several hundred MHz. ...
Adjustable CMOS Current Reference with Low Line Regulation Current Mirror
This paper presents a temperature-compensated CMOS current reference with low line regulation current mirror. The circuit is based on a bandgap reference voltage that achieves the temperature compensation of resistor by the negative temperature ...
Comments