ABSTRACT
A fully integrated CMOS low-noise mixing circuit operating at an RF frequency of 5.4 GHz is presented in this paper. The mixer is a Gilbert cell with a low-noise transconductor stage and a current-bleeding circuit. The transconductor, designed using the power constrained simultaneous noise and input match technique, together with the bleeding circuit enables the mixer to have a measured single-sideband noise figure of 7.8 dB and a power conversion gain of 13.1 dB. The output-referred 1-dB compression point, OP1dB, is -5 dBm and the output-referred IP3 is +6.9 dBm. All of the inductors are on-chip and the size of the mixer core is only 380 um x 350 um (0.133 mm2).
- H. Sjoland, A. Karimi-Sanjaani, and A. Abidi, "A merged CMOS LNA and mixer for a WCDMA receiver," IEEE Journal of Solid-State Circuits, vol. 38, no. 6, pp. 1045--1050, June 2003.Google ScholarCross Ref
- S.-G. Lee and J.-K. Choi, "Current-reuse bleeding mixer," Electronics Letters, vol. 36, no. 8, pp. 696--697, Apr 2000.Google ScholarCross Ref
- J. Park, C.-H. Lee, B.-S. Kim, and J. Laskar, "Design and Analysis of Low Flicker-Noise CMOS Mixers for Direct-Conversion Receivers," IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 12, pp. 4372--4380, Dec. 2006.Google ScholarCross Ref
- H. Darabi and J. Chiu, "A noise cancellation technique in active RF-CMOS mixers," IEEE Journal of Solid-State Circuits, vol. 40, no. 12, pp. 2628--2632, Dec. 2005.Google ScholarCross Ref
- T.-A. Phan, C.-W. Kim, M.-S. Kang, S.-G. Lee, and C.-D. Su, "A High Performance CMOS Direct Down Conversion Mixer for UWB System," IEICE Transactions on Electronics, vol. E88-C, no. 12, pp. 2316--2321, Dec. 2005.Google Scholar
- F. Skandar, S. Douss, and M. Loulou, "A 3.1--4.8 GHz new CMOS mixer topology for IEEE 802.15.3a UWB standard receivers," 50th Midwest Symposium on Circuits and Systems, pp. 431--434, Aug. 2007.Google Scholar
- S. S. K. Ho and C. E. Saavedra, "A CMOS Broadband Low-Noise Mixer with Noise Cancellation," IEEE Transactions on Microwave Theory and Techniques, vol. 58, no. 5, pp. 1126--1132, May 2010.Google ScholarCross Ref
- T.-K. Nguyen, C.-H. Kim, G.-J. Ihm, M.-S. Yang, and S.-G. Lee, "CMOS low-noise amplifier design optimization techniques," IEEE Transactions on Microwave Theory and Techniques, vol. 52, no. 5, pp. 1433--1442, May 2004.Google ScholarCross Ref
- T. H. Lee, Planar Microwave Engineering. Cambridge University Press, 2004.Google Scholar
- L. MacEachern and T. Manku, "A charge-injection method for Gilbert cell biasing," IEEE Canadian Conference on Electrical and Computer Engineering, vol. 1, pp. 365--368 vol.1, May 1998.Google ScholarCross Ref
- H. Darabi and A. Abidi, "Noise in RF-CMOS mixers: a simple physical model," IEEE Journal of Solid-State Circuits, vol. 35, no. 1, pp. 15--25, Jan 2000.Google ScholarCross Ref
Index Terms
- A 5.4 GHz fully-integrated low-noise mixer
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