Yao Wang
ABSTRACT
Aggressive technology scaling has led Integrated Circuits (ICs) suffer from ever-increasing wearout effects. As a consequence, Dynamic Reliability Management (DRM) becomes an essential approach to assure IC's lifetime reliability. Accurate and efficient reliability modeling from low-level aging sensor measurements is critical to DRM systems. This work presents a Time-Sharing Sensing (TSS) method for $V_{th}$-sensor based DRM to assess the dynamic NBTI-induced degradation experienced by the circuit under monitoring. SPICE simulation results suggest that the proposed TSS method can accurately capture the circuit reliability status under random stress conditions.
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Index Terms
- Lifetime reliability assessment with aging information from low-level sensors
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