Circuit Sensing Techniques in Magnetoresistive Random-Access Memory
In this paper, we review circuit techniques for read performance enhancement of magnetic random-access memories (MRAMs) that are based on magnetic tunnel junction (MTJ) devices with spin transfer torque (STT) switching mechanism for normally-off and nonvolatile computing. First, a brief
discussion of the construction and operation of STT-MRAM, and the mechanism of operation of STT-MTJ devices is presented. Circuit sensing techniques are then introduced and divided into two categories—current mode and voltage mode—according to their sensing scheme. These techniques
are described in detail with comprehensive case studies from literature, followed by a thorough comparison and discussion of their respective design space.
Keywords: EMBEDDED NONVOLATILE MEMORY (ENVM); LOW-POWER MEMORY CIRCUIT; MAGNETIC RANDOM ACCESS MEMORY (MRAM); MAGNETIC TUNNEL JUNCTION (MTJ); NONVOLATILE COMPUTING; SPIN TRANSFER TORQUE (STT); SPINTRONICS
Document Type: Research Article
Publication date: 01 June 2018
- The electronic systems that can operate with very low power are of great technological interest. The growing research activity in the field of low power electronics requires a forum for rapid dissemination of important results: Journal of Low Power Electronics (JOLPE) is that international forum which offers scientists and engineers timely, peer-reviewed research in this field.
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