Improving the Performance of Static CMOS Gates by Using Independent Bodies
In this paper, the advantages of using independent bodies for each series transistor in static bulk-CMOS gates are considered. This technique reduces internal parasitic capacitance and enhances the transistor conductance, thus improving the delay and power characteristics of the gates.
Keywords: BODY EFFECT; CMOS DIGITAL GATES; HIGH SPEED; LOWPOWER; PARASITIC CAPACITANCE
Document Type: Research Article
Publication date: 01 April 2007
- The electronic systems that can operate with very low power are of great technological interest. The growing research activity in the field of low power electronics requires a forum for rapid dissemination of important results: Journal of Low Power Electronics (JOLPE) is that international forum which offers scientists and engineers timely, peer-reviewed research in this field.
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