Design of a Low Leakage, Low Power and High Performance Search and Read Memory Using CAM and SRAM
A low leakage, low power and high speed memory has been developed using a combination of content addressable memory (CAM) and static random access memory (SRAM) in 150 nm node technology and with a power supply of 1 volt. Data search operation is done by using CAM while SRAMs are used as data storage cells. Data read operation is performed through a read circuit that is controlled by the search result of CAM cells. A priority checker has been incorporated into the CAM cells to make the search operation more precise.
Keywords: CAM; HIGH-SPEED; LOW-POWER; MEMORY DESIGN; SRAM
Document Type: Research Article
Publication date: 01 August 2008
- The electronic systems that can operate with very low power are of great technological interest. The growing research activity in the field of low power electronics requires a forum for rapid dissemination of important results: Journal of Low Power Electronics (JOLPE) is that international forum which offers scientists and engineers timely, peer-reviewed research in this field.
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