Ultrathin Compound Semiconductor in Bulk Planar Junctionless Transistor for High-Performance Nanoscale Transistors

As scaling of devices continues it limits the use of silicon as channel material for devices since supply voltage cannot be scaled at the same rate. Bulk planar junctionless transistor (BPJLT) with compound III–V semiconductors as channel material is proposed in this work. They have the potential to replace the silicon channel in a BPJLT with high mobility and large energy band gap. Transistors based on these materials are mainly used in high-speed and high-frequency applications. BPJLT with III–V semiconductors as channel material show low band to band tunneling leakage current and improved I _on /I _off. Also, mole fraction of InGaAs is adjusted and Gaussian distribution doping profile of channel is proposed to obtain better off characteristics.