Impact of Collector Length on the Performance of NPN SiGe HBT on Thin Film SOI
In this paper, the process simulations have been performed to obtain the realistic doping profile of npn SOI HBT. The collector length has been scaled through process simulations. The broadening of base profile has been observed in the HBT with shorter collector length. The dc and ac
characteristics of npn HBT on thin film SOI has been studied with 2D numerical simulations. The improvement in β, β
V
A
product and f
t
is observed at high injection. The optimum collector length (200 nm) has been found
to obtain better f
t
BV
CEO
product (285 GHzV) in SOI HBT. The trade off in the R
B
, f
t
and BV
CEO
of SOI HBT is analyzed. The HBT with shorter collector length can be operated
for high frequency applications at low value of noise figure compared to the HBT with longer collector length. The HBT is compatible with thin film SOI CMOS technology.
Keywords: LATERAL SCALING; NPN SIGE HBT; SENTAURUS; SOI; SOI BICMOS
Document Type: Research Article
Publication date: 01 September 2014
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