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Energy Consumption by Reversible ircuits in the 130 nm and 65 nm Nodes

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Previous studies in the CMOS 350 nm technology node, showed that adiabatic dual-line pass-transistor reversible CMOS circuits may be of real interest, especially for human-machine interaction applications such as video, sound and all embedded functions where low-power, low-consumption are mandatory and where frequencies are not the main concern. But the question of viability, suitability and consumption of the quantum-inspired adiabatic reversible CMOS technology with the reduction of the feature size is often asked. With the reduction of transistor sizes, comes an increase of gate leakage that may have a negative impact both on the computation reliability and on the consumption. In another hand, size reduction may allow a gain in performance for an equivalent energy consumption. This paper gives a first evaluation on the consumption by the adiabatic reversible circuit in the 130 nm and 65 nm technology nodes. We show that both 130 nm and 65 nm technologies are suitable for reversible computation. Even better, compared to longer transistor nodes, both small sizes allow to reduce the energy consumption below 1 pJ per transistor and per cycle.

Keywords: 130 NM; 350 NM; 65 NM; ADIABATIC SIGNAL; CMOS TECHNOLOGY; CONSUMPTION; DESIGN; ENERGY; IMPLEMENTATION; QUANTUM COMPUTING; REVERSIBLE COMPUTATION; RIPPLE-CARRY ADDER; THRESHOLD VOLTAGE

Document Type: Research Article

Publication date: 01 September 2014

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  • The electronic systems that can operate with very low power are of great technological interest. The growing research activity in the field of low power electronics requires a forum for rapid dissemination of important results: Journal of Low Power Electronics (JOLPE) is that international forum which offers scientists and engineers timely, peer-reviewed research in this field.
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