An Ultra-Low Power CMOS Temperature Sensor for Passive RFID Application
This paper presents an ultra-low power CMOS Temperature Sensor for RFID Application. The proposed temperature sensor employs an inverter-based ring oscillator to generate a PTAT frequency, which is followed by a counter to achieve digital output conversion. The proposed temperature
sensor is fabricated in TSMC 0.18 μm CMOS process and covers an area of 0.062 mm2. The measurement results show that this temperature sensor consumes 113 nW power at 0.5 V supply voltage. The measured resolution is 0.3 °C/LSB within the range from –40 °C
to 80 °C and the error is –0.7/1.2 °C after 2-point calibration.
Keywords: CMOS PROCESS; LOW POWER; PTAT CURRENT; RFID TECHNOLOGY; RING OSCILLATOR; TEMPERATURE SENSOR
Document Type: Research Article
Publication date: 01 December 2015
- The electronic systems that can operate with very low power are of great technological interest. The growing research activity in the field of low power electronics requires a forum for rapid dissemination of important results: Journal of Low Power Electronics (JOLPE) is that international forum which offers scientists and engineers timely, peer-reviewed research in this field.
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