An Efficient Analog-to-Digital Converter Based on Carbon Nanotube FETs

This study presents an efficient CNTFET-based flash analog to digital converter suitable for low-power nanoscale mixed-signal integrated circuits and embedded systems. The unique characteristics of carbon nanotube FET (CNTFET), such as the feasibility of obtaining the desired threshold voltages by altering the diameter of nanotubes, ultra-high-gain binary inverters and same carrier mobility for n-type and p-type devices, are substantially used in designing the proposed circuit. The proposed design is simulated, using HSPICE with 32 nm Stanford CNTFET model. The results indicate considerable improvements in terms of speed, power consumption and specifically the number of transistors as compared to the other state-of-the-art flash analog to digital converter previously presented in the literature.