SiGe Source Dual Metal Double Gate Tunnel Field Effect Transistor

In this paper, to address the low ON current issue in TFETs, a dual metal double gate tunnel field effect transistor (DMG-DGTFET) with type-II staggered band alignment SiGe hetero junction source is presented. The good compatibility of SiGe with Si lead to better quality hetrojunction SiGe source. The DMG technique offers the flexibility to have low as well as high metal work function materials to individually control the transfer characteristics of the device. This results in significant increment in ON current, improved subthreshold slope and reduced threshold voltage. The hetero SiGe source offers tuneable band gap with variation in Ge mole fraction and resulting improved device transfer characteristics.