Delayed Interferometer Based Si-wire WDM Demultiplexers Fabricated by Phase Controllable and Productive 300-mm Wafer-scale ArF-Immersion Lithography Technology

Seok-Hwan Jeong; Daisuke Shimura; Takasi Simoyama; Tsuyoshi Horikawa; Tsuyoshi Horikawa; Yu Tanaka; Ken Morito

doi:10.1364/OFC.2014.Th3F.5

Optical Fiber Communication Conference
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper Th3F.5
•https://doi.org/10.1364/OFC.2014.Th3F.5

Delayed Interferometer Based Si-wire WDM Demultiplexers Fabricated by Phase Controllable and Productive 300-mm Wafer-scale ArF-Immersion Lithography Technology

Seok-Hwan Jeong, Daisuke Shimura, Takasi Simoyama, Tsuyoshi Horikawa, Yu Tanaka, and Ken Morito

Optical Fiber Communication Conference 2014

San Francisco, California United States
9–13 March 2014
ISBN: 978-1-55752-993-0

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Demultiplexers and Switches (Th3F)

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S. Jeong, D. Shimura, T. Simoyama, T. Horikawa, Y. Tanaka, and K. Morito, "Delayed Interferometer Based Si-wire WDM Demultiplexers Fabricated by Phase Controllable and Productive 300-mm Wafer-scale ArF-Immersion Lithography Technology," in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper Th3F.5.

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Abstract

We report good phase controllability and high production yield in Si-wire delayed interferometer-type demultiplexers fabricated by 300-mm wafer-scale ArF-immersion lithography technologies. The results are promising for utilization in high-density WDM interconnects.

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