In this paper, the influence of high-temperature sputtering on the nitrogen-doped (N-doped) LaB₆ thin film formation utilizing RF sputtering was investigated. The N-doped LaB₆/SiO₂/p-Si(100) MOS diode and N-doped LaB₆/p-Si(100) of Schottky diode were fabricated. A 30 nm thick N-doped LaB₆ thin film was deposited from room temperature (RT) to 150^°C. It was found that the resistivity was decreased from 1.5 mΩcm to 0.8 mΩcm by increasing deposition temperature from RT to 150^°C. The variation of work function was significantly decreased in case that N-doped LaB₆ thin film deposited at 150^°C. Furthermore, Schottky characteristic was observed by increasing deposition temperature to 150^°C. In addition, the crystallinity of N-doped LaB₆ thin film was improved by increasing deposition temperature.