IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO2 Utilizing Pt Gate Electrodes
Min Gee KIM, Masakazu KATAOKA, Rengie Mark D. MAILIG, Shun-ichiro OHMI
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Keywords: ferroelectrics, nondoped HfO2, MFSFET, nonvolatile memory
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2020 Volume E103.C Issue 6 Pages 280-285

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Abstract

Ferroelectric gate field-effect transistors (MFSFETs) were investigated utilizing nondoped HfO2 deposited by RF magnetron sputtering utilizing Hf target. After the post-metallization annealing (PMA) process with Pt top gate at 500°C/30s, ferroelectric characteristic of 10nm thick nondoped HfO2 was obtained. The fabricated MFSFETs showed the memory window of 1.7V when the voltage sweep range was from -3 to 3V.

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© 2020 The Institute of Electronics, Information and Communication Engineers
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