IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Regular Section
A Region-Based Through-Silicon via Repair Method for Clustered Faults
Tianming NIHuaguo LIANGMu NIEXiumin XUAibin YANZhengfeng HUANG
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2017 Volume E100.C Issue 12 Pages 1108-1117

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Abstract

Three-dimensional integrated circuits (3D ICs) that employ through-silicon vias (TSVs) integrating multiple dies vertically have opened up the potential of highly improved circuit designs. However, various types of TSV defects may occur during the assembly process, especially the clustered TSV faults because of the winding level of thinned wafer, the surface roughness and cleanness of silicon dies,inducing TSV yield reduction greatly. To tackle this fault clustering problem, router-based and ring-based TSV redundancy architectures were previously proposed. However, these schemes either require too much area overhead or have limited reparability to tolerant clustered TSV faults. Furthermore, the repairing lengths of these schemes are too long to be ignored, leading to additional delay overhead, which may cause timing violation. In this paper, we propose a region-based TSV redundancy design to achieve relatively high reparability as well as low additional delay overhead. Simulation results show that for a given number of TSVs (8*8) and TSV failure rate (1%), our design achieves 11.27% and 20.79% reduction of delay overhead as compared with router-based design and ring-based scheme, respectively. In addition, the reparability of our proposed scheme is much better than ring-based design by 30.84%, while it is close to that of the router-based scheme. More importantly, the overall TSV yield of our design achieves 99.88%, which is slightly higher than that of both router-based method (99.53%) and ring-based design (99.00%).

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© 2017 The Institute of Electronics, Information and Communication Engineers
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