IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Regular Section
A 3-D Packaging Technology with Highly-Parallel Memory/Logic Interconnect
Yoichiro KURITAKoji SOEJIMAKatsumi KIKUCHIMasatake TAKAHASHIMasamoto TAGOMasahiro KOIKEKoujirou SHIBUYAShintaro YAMAMICHIMasaya KAWANO
Author information
JOURNAL RESTRICTED ACCESS

2009 Volume E92.C Issue 12 Pages 1512-1522

Details
Abstract

A three-dimensional semiconductor package structure with inter-chip connections was developed for broadband data transfer and low latency electrical communication between a high-capacity memory and a logic device interconnected by a feedthrough interposer (FTI) featuring a 10µm scale fine-wiring pattern and ultra-fine-pitch through vias. This technology features co-existence of the wide-band memory accessibility of a system-on-chip (SoC) and the capability of memory capacity increasing of a system-in-package (SiP) that is made possible by the individual fabrication of memory and logic on independent chips. This technology can improve performance due to memory band widening and a reduction in the power consumed in inter-chip communications. This paper describes the concept, structure, process, and experimental results of prototypes of this package, called SMAFTI (SMAart chip connection with FeedThrough Interposer). This paper also reports the results of the fundamental reliability test of this novel inter-chip connection structure and board-level interconnectivity tests.

Content from these authors
© 2009 The Institute of Electronics, Information and Communication Engineers
Previous article Next article
feedback
Top