High Speed 1.1-µm-Range InGaAs-Based VCSELs

Naofumi SUZUKI; Takayoshi ANAN; Hiroshi HATAKEYAMA; Kimiyoshi FUKATSU; Kenichiro YASHIKI; Keiichi TOKUTOME; Takeshi AKAGAWA; Masayoshi TSUJI

doi:10.1587/transele.E92.C.942

Special Section on Recent Advances in Ultra-high-speed Photonic Devices for Next-generation Optical Fiber Communications

High Speed 1.1-µm-Range InGaAs-Based VCSELs

Naofumi SUZUKI, Takayoshi ANAN, Hiroshi HATAKEYAMA, Kimiyoshi FUKATSU, Kenichiro YASHIKI, Keiichi TOKUTOME, Takeshi AKAGAWA, Masayoshi TSUJI

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Keywords: vertical-cavity surface-emitting lasers (VCSELs), optical interconnections, semiconductor lasers, tunnel junction, high-speed modulation

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2009 Volume E92.C Issue 7 Pages 942-950

DOI https://doi.org/10.1587/transele.E92.C.942

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Abstract

We have developed InGaAs-based VCSELs operating around 1.1µm for high-speed optical interconnections. By applying GaAsP barrier layers, temperature characteristics were considerably improved compared to GaAs barrier layers. As a result, 25Gbps 100°C error-free operation was achieved. These devices also exhibited high reliability. No degradation was observed over 3, 000 hours under operation temperature of 150°C and current density of 19kA/cm². We also developed VCSELs with tunnel junctions for higher speed operation. High modulation bandwidth of 24GHz and a relaxation oscillation frequency of 27GHz were achieved. 40Gbps error-free operation was also demonstrated.

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