Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems

Amine EL MOUTAOUAKIL; Tsuneyoshi KOMORI; Kouhei HORIIKE; Tetsuya SUEMITSU; Taiichi OTSUJI

doi:10.1587/transele.E93.C.1286

Special Section on Heterostructure Microelectronics with TWHM 2009

Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems

Amine EL MOUTAOUAKIL, Tsuneyoshi KOMORI, Kouhei HORIIKE, Tetsuya SUEMITSU, Taiichi OTSUJI

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Keywords: terahertz, plasmon resonance, emitter, dual grating gate dimension

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2010 Volume E93.C Issue 8 Pages 1286-1289

DOI https://doi.org/10.1587/transele.E93.C.1286

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Abstract

We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.

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